Electro-optic (E-O) modulators play a major role in optical communications systems. Currently, E-O devices are largely fabricated on bulk LiNbO3 single crystals and are combined with other optical and electronic components in hybrid form. Our goal is to translate bulk single crystal technology used for electro-optic modulation and phase shifting into thin film form compatible with Si-based microphotonics. LiNbO3’s primary advantage for use as E-O modulator material is based on its ability to be grown as large, high quality single crystals.

In terms of integration on Si platforms, it is not necessary to grow large single crystals. Here, KNbO3 and BaTiO3, have more desirable properties, such as much higher electro-optic coefficients. In particular, there is has been a great deal of effort expended on the growth a number of ferroelectric oxides, including BaTiO3, onto Si for the purpose of developing active micro-photonic devices.