Y. Avrahami, E. Zolotoyabko, "Study of atomic diffusion and related
structural modifications by high – resolution x-ray diffraction: Ti – diffusion
in LiNbO3", J. Appl.
Phys. 85, 9 (1999) pp.6447-6452.
The ability of high-resolution X-ray diffraction, as a nondestructive
method, to provide information on atomic diffusion is analyzed. The analysis
focuses on studying Ti-diffused waveguide layers of LiNbO3 crystals
for optoelectronic applications. Samples were prepared by a deposition
of a 35-nm-thick Ti layer on the 3-in.-Y-cut LiNbO3 wafer and
subsequent annealing at 995ºC for periods of 0.5-6 h. Depth-resolved
profiles of the interplanar spacing derived from X-ray diffraction data
are compared with the Ti-concentration profiles measured by secondary ion
mass spectrometry. It is shown that both results can be used with confidence
to determine the Ti-diffusion coefficients in LiNbO3. Comparison
of the two techniques allowed us to obtain a numerical factor, K, relating
the Ti concentration and the modification of lattice parameters, i.e.,
to characterize quantitatively the extent of lattice contraction due to
Ti incorporation in the LiNbO3 crystal. The K factor was found
to increase with annealing time, indicating a variable strain contribution
to the structural parameters of the waveguide layer. These variations are
attributed to high-temperature phase transformation processes, which accompany
Ti diffusion. (24 References).